InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

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2D numerical TCAD simulations are used to click here infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells.In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells.The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and commented.Functional cells are presented and tillman 750m compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks.