InGaAs Capacitor-Less DRAM Cells TCAD Demonstration
2D numerical TCAD simulations are used to click here infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells.In particular, indium gallium arsenide on insulator technology is selected to verify the viability of III-V meta-stable-dip RAM cells.The cell performance dependence on several parameters (such as the back-gate voltage, semicondu